View AOL1448_4326835.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

AOL1448 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOL1448 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications.
Features
VDS (V) =30V ID = 36A RDS(ON) < 9.5m RDS(ON) < 14m (VGS = 10V) (VGS = 10V) (VGS = 4.5V)
- RoHS Compliant - Halogen Free
100% UIS Tested! 100% R g Tested!
UltraSO-8TM Top View D Bottom tab connected to drain G
G
D
S
S
Absolute Maximum Ratings TA=25 unless otherwise noted C Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25 Power Dissipation B Power Dissipation
A C
Maximum 30 20 36 28 90 11 9 20 20 30 15 2 1.3 -55 to 175
Units V V A
VGS TC=25 C TC=100 C TA=25 C TA=70 C ID IDM IDSM IAR EAR PD PDSM TJ, TSTG
A A mJ W W C
TC=100 C TA=25 C TA=70 C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
Symbol t 10s Steady-State Steady-State RJA RJC
Typ 20 48 3.5
Max 25 60 5
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1448
Electrical Characteristics (TJ=25 unless otherwise noted) C Symbol Parameter Conditions ID=250A, VGS=0V VDS=30V, VGS=0V TJ=55 C VDS=0V, VGS= 20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance Diode Forward Voltage VDS=5V, ID=20A IS=1A,VGS=0V C TJ=125 1.2 90 7.5 11.5 11 43 0.7 1 30 600 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 200 40 0.4 9 VGS=10V, VDS=15V, ID=20A 4 1.6 1.5 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=500A/s 9 18 750 245 70 0.8 11.5 5 2 2.5 5 3 18 3 11 23 13 28 980 365 100 1.4 14 6 2.4 3.5 9.5 14 14 1.7 Min 30 1 5 100 2.2 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/s
A: The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25 The C. Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150 The value in any given application depends C. on the user's specific board design, and the maximum temperature of 175 may be used if the PCB allow s it. C C, B. The power dissipation PD is based on TJ(MAX)=175 using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175 Ratings are based on low frequency and duty cycles to keep C. C. initial TJ =25 D. The RJA is the sum of the thermal impedence from junction to case RJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming C. a maximum junction temperature of TJ(MAX)=175 The SOA curve provides a single pulse ratin g. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25 C. Rev1 : Jan-09 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1448
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
90 10V 80 4.5V 70 60 ID (A) 50 40 3.5 30 20 10 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 16 14 RDS(ON) (m ) 12 10 8 6 4 0 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 10 VGS=10V VGS=4.5V Normalized On-Resistance 2 1.8 1.6 1.4 1.2 1 0.8 0 25 50 75 100 125 150 175 200 VGS=10V ID=20A VGS=3V 7V 4V ID(A) 6V 50 40 30 20 125C 10 0 0 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 25C VDS=5V 60
17 5 2 10 VGS=4.5V
ID=20A
0 Temperature (C) Figure 4: On-Resistance vs. Junction 18 Temperature (Note E)
1.0E+02
35 30 25 RDS(ON) (m ) 20 15 10 5 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) 25C 125C IS (A) ID=20A
1.0E+01 1.0E+00 1.0E-01 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) 125C 25C
40
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1448
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 VDS=15V ID=20A 8 Capacitance (pF) 1200 1000 Ciss 800 600 400 200 0 0 6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics 2 4 12 0 Crss 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss
VGS (Volts)
6
4
2
0
1000 100 ID (Amps) 10 1 0.1 0.01 0.01 10s
200 160 Power (W) 120 80 40 0 0.0001
10s
RDS(ON) limited DC TJ(Max)=175 C C TC=25
TJ(Max)=175C TC=25C
100s 1ms 10ms
17 5 2 10
0.1
1 VDS (Volts)
10
100
0.001
0.01
0.1
1
Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 Z JC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=5C/W 1
Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
0
10
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1
PD Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1448
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 IAR(A) Peak Avalanche Current TA=25C Power Dissipation (W) 80 TA=100C 35 30 25 20 15 10 5 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 13: Power De-rating (Note F)
60
TA=150C
40 TA=125C
20
0 0.000001
0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C)
40 35 Current rating ID(A) 30
10000
TA=25C
1000
Power (W)
25 20 15 10 5 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note F)
100
17 5 2 10
10
1 0 0 0 0.01 0.1 1 10 100 0 1000
Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
10 Z JA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA 1 RJA=60C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
0.1 PD Single Pulse Ton 0.001 0.00001 T 100 1000
0.01
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOL1448
Gate Charge Test Circuit & Waveform
Vgs Qg
+
VDC
10V
VDC
DUT Vgs Ig
+ Vds -
Qgs
Qgd
Charge
Resistive Switching Test Circuit & Waveforms
RL Vds Vds
Vgs Rg
DUT
VDC
+ Vdd Vgs
t d(on) t on tr t d(off) t off tf
90%
10%
Vgs
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L Vds Id Vgs Rg DUT Vgs Vgs Vgs Vds EAR= 1/2 LIAR
2
BVDSS
VDC
+ Vdd Id
I AR
Diode Recovery Test Circuit & Waveforms
Vds + DUT Vgs
t rr
Q rr = - Idt
Vds Isd Vgs Ig
L
Isd
IF
dI/dt I RM Vdd
VDC
+ Vdd Vds
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com

▲Up To Search▲

Price & Availability of AOL1448

	To Download AOL1448 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .